参数资料
型号: ST180C12C1
厂商: VISHAY SEMICONDUCTORS
元件分类: 晶闸管
英文描述: 660 A, 1200 V, SCR, TO-200AB
封装: APUK-2
文件页数: 2/7页
文件大小: 87K
代理商: ST180C12C1
ST180C..C Series
2
Bulletin I25164 rev. C 02/00
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
VV
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
ST180C..C
30
I
T(AV)
Max. average on-state current
350 (140)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
660
@ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
5000
t = 10ms
No voltage
non-repetitive surge current
5230
A
t = 8.3ms
reapplied
4200
t = 10ms
100% V
RRM
4400
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
125
t = 10ms
No voltage
Initial T
J = TJ max.
114
t = 8.3ms
reapplied
88
t = 10ms
100% V
RRM
81
t = 8.3ms
reapplied
I
2√t
Maximum I
2√t for fusing
1250
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.96
V
I
pk
= 750A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
1.08
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.18
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.14
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
ST180C..C
Units Conditions
1.14
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
V
m
mA
T
J
= T
J
max, anode supply 12V resistive load
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