参数资料
型号: ST180C12C1
厂商: VISHAY SEMICONDUCTORS
元件分类: 晶闸管
英文描述: 660 A, 1200 V, SCR, TO-200AB
封装: APUK-2
文件页数: 5/7页
文件大小: 87K
代理商: ST180C12C1
ST180C..C Series
5
Bulletin I25164 rev. C 02/00
www.irf.com
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
40
50
60
70
80
90
100
110
120
130
0
50
100
150
200
250
30
60
90
120
180
Conduction Angle
ST180C..C Series
(Single Side Cooled)
R
(DC) = 0.17 K/W
thJ-hs
AverageOn-stateCurrent(A)
Maximum
Allowable
Heatsink
Temperature
(°C)
AverageOn-stateCurrent(A)
Maximum
Allowable
Heatsink
Temperature
(°C)
20
30
40
50
60
70
80
90
100
110
120
130
0
100
200
300
400
DC
30
60
90
120
180
Conduction Period
ST180C..C Series
(Single Side Cooled)
R
(DC) = 0.17 K/W
thJ-hs
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