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参数资料
| 型号： | ST180C12C1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 660 A, 1200 V, SCR, TO-200AB |
| 封装： | APUK-2 |
| 文件页数： | 7/7页 |
| 文件大小： | 87K |
| 代理商： | ST180C12C1 |
ST180C..C Series
7
www.irf.com
Bulletin I25164 rev. C 02/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous
On-state
Current
(A)
Square Wave Pulse Duration (s)
Transient
Thermal
Impedance
Z
(K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous
Gate
Voltage
(V)
100
1000
10000
123456
T = 25C
J
T = 125C
J
ST180C..C Series
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
ST180C..C Series
Steady State Value
R
= 0.17 K/W
(Single Side Cooled)
R
= 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
j=25
C
Tj
=1
25
C
T
j=-
40
C
(1) (2) (3)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST180C..C Series
Rectangular gate pulse
(4)
相关PDF资料 |
PDF描述 |
|---|---|
| ST180C16C0 | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C1L | 660 A, 1600 V, SCR, TO-200AB |
| ST180C16C1 | 660 A, 1600 V, SCR, TO-200AB |
| ST180C18C0 | 660 A, 1800 V, SCR, TO-200AB |
| ST1230C08K1 | 3200 A, 800 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST180C12C1L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C12C2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C12C2L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C12C3 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST180C12C3L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
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