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参数资料
型号： ST72F611F1B1
英文描述： 64Mb EDO/FPM - OBSOLETE
中文描述： ST7的-低速USB 8 - 3端点位MCU。闪存。内径。水分散粒剂。定时器
文件页数： 36/161页
文件大小： 2070K
代理商： ST72F611F1B1
ST72324
130/161
12.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
12.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
s
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
s
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to VDD and VSS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed.
12.7.2 Electro Magnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product
is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies
the board and the loading of each pin.
Notes:
1. Data based on characterization results, not tested in production.
Symbol
Parameter
Conditions
Neg 1)
Pos 1)
Unit
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-2
-1
>1.5
kV
VFFTB
Fast transient voltage burst limits to be ap-
plied through 100pF on VDD and VDD pins
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-4
-1.7
1.7
Symbol
Parameter
Conditions
Monitored
Frequency Band
Max vs. [fOSC/fCPU]
Unit
8/4MHz
16/8MHz
SEMI
Peak level
VDD=5V, TA=+25°C,
TQFP44 package
conforming to SAE J 1752/3
0.1MHz to 30MHz
20
21
dB
V
30MHz to 130MHz
26
31
130MHz to 1GHz
22
28
SAE EMI Level
3.5
4.0
-
SEMI
Peak level
VDD=5V, TA=+25°C,
TQFP32 package
conforming to SAE J 1752/3
0.1MHz to 30MHz
25
27
dB
V
30MHz to 130MHz
30
36
130MHz to 1GHz
18
23
SAE EMI Level
3.0
3.5
-
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