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型号： ST72F611F1B1
英文描述： 64Mb EDO/FPM - OBSOLETE
中文描述： ST7的-低速USB 8 - 3端点位MCU。闪存。内径。水分散粒剂。定时器
文件页数： 39/161页
文件大小： 2070K
代理商： ST72F611F1B1
ST72324
133/161
EMC CHARACTERISTICS (Cont’d)
12.7.4 ESD Pin Protection Strategy
To protect an integrated circuit against Electro-
Static Discharge the stress must be controlled to
prevent degradation or destruction of the circuit el-
ements. The stress generally affects the circuit el-
ements which are connected to the pads but can
also affect the internal devices when the supply
pads receive the stress. The elements to be pro-
tected must not receive excessive current, voltage
or heating within their structure.
An ESD network combines the different input and
output ESD protections. This network works, by al-
lowing safe discharge paths for the pins subjected
to ESD stress. Two critical ESD stress cases are
presented in Figure 72 and Figure 73 for standard
pins and in Figure 74 and Figure 75 for true open
drain pins.
Standard Pin Protection
To protect the output structure the following ele-
ments are added:
– A diode to VDD (3a) and a diode from VSS (3b)
– A protection device between VDD and VSS (4)
To protect the input structure the following ele-
ments are added:
– A resistor in series with the pad (1)
– A diode to VDD (2a) and a diode from VSS (2b)
– A protection device between VDD and VSS (4)
Figure 72. Positive Stress on a Standard Pad vs. VSS
Figure 73. Negative Stress on a Standard Pad vs. VDD
IN
VDD
VSS
(1)
(2a)
(2b)
(4)
OUT
VDD
VSS
(3a)
(3b)
Main path
Path to avoid
IN
VDD
VSS
(1)
(2a)
(2b)
(4)
OUT
VDD
VSS
(3a)
(3b)
Main path
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