- 您现在的位置：买卖IC网 > PDF目录195890 > ST733C08LFM1L 1900 A, 800 V, SCR, TO-200AC PDF资料下载
参数资料
| 型号： | ST733C08LFM1L |
| 元件分类： | 晶闸管 |
| 英文描述： | 1900 A, 800 V, SCR, TO-200AC |
| 封装： | METAL CASE WITH CERAMIC INSULATOR, BPUK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 157K |
| 代理商： | ST733C08LFM1L |
ST733C..L Series
3
www.irf.com
Bulletin I25188 rev. A 04/00
V
TM
Max. peak on-state voltage
1.63
I
TM= 1700A, TJ = TJ max, t
p
= 10ms sine wave pulse
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)2 High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J = 25°C, I T > 30A
I
L
Typical latching current
1000
T
J = 25°C, VA= 12V, Ra = 6 , I G= 1A
Parameter
ST733C..L
Units
Conditions
On-state Conduction
1.09
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.20
(I >
π x I
T(AV)
), T
J
= T
J
max.
V
0.32
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.29
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt
of turned-on current
Gate pulse: 20V 20
, 10s 0.5s rise time
T
J= 25°C, V
DM = rated VDRM, ITM = 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J = TJ max, ITM = 550A, commutating di/dt = -40A/s
V
R = 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST733C..L
Units
Conditions
1000
A/s
t
d
Typical delay time
1.5
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST733C..L
Units
Conditions
Blocking
500
V/
s
75
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J = TJ max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST733C..L
Units
Conditions
WT
J
= T
J
max., f = 50Hz, d% = 50
20
5
VT
J = TJ max, t
p ≤
5ms
200
mA
3V
T
J = 25°C, V A = 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
s
t
q
Max. turn-off time
10
20
相关PDF资料 |
PDF描述 |
|---|---|
| ST733C08LFM3L | 1900 A, 800 V, SCR, TO-200AC |
| ST733C08LDP2PBF | 1900 A, 800 V, SCR, TO-200AC |
| ST733C08LDP2LPBF | 1900 A, 800 V, SCR, TO-200AC |
| ST733C08LDP3PBF | 1900 A, 800 V, SCR, TO-200AC |
| ST93003 | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST733C08LFM1PBF | 制造商:International Rectifier 功能描述:THYRISTOR 1900A 800V TO-200AC |
| ST7-34 | 制造商:SUPERWORLD 制造商全称:Superworld Electronics 功能描述:POWER TRANSFORMER |
| ST735 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:-5V INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR |
| ST735B2508L2 | 制造商:Marathon Special Products 功能描述: |
| ST735B2508R2 | 制造商:Marathon Special Products 功能描述: |
发布紧急采购，3分钟左右您将得到回复。