参数资料
型号: ST733C08LFM1L
元件分类: 晶闸管
英文描述: 1900 A, 800 V, SCR, TO-200AC
封装: METAL CASE WITH CERAMIC INSULATOR, BPUK-3
文件页数: 8/9页
文件大小: 157K
代理商: ST733C08LFM1L
ST733C..L Series
8
www.irf.com
Bulletin I25188 rev. A 04/00
Fig.14-FrequencyCharacteristics
Fig.15-FrequencyCharacteristics
Fig.16-MaximumOn-stateEnergyPowerLossCharacteristics
1E 2
1E 3
1E 4
1E 5
1E 1
1E 2
1E 3
1E 4
50 H z
40 0
25 00
10 0
100 0
1 500
20 0
Puls e B ase wid th (s )
50 00
S nubbe r circuit
R
= 10 o hms
C = 0.47 F
V = 8 0% V
s
D
DR M
S T 733C..L S eries
T rape zoida l puls e
T
= 4 0°C
di/ dt= 5 0A/ s
C
1E 4
500
2 000
30 00
1E 1
1 E 2
1E 3
1E 4
50 H z
40 0
250 0
10 0
1 000
150 0
20 0
P uls e B asewidth (s)
S nub ber circuit
R
= 10 ohms
C = 0.47 F
V = 80% V
S T 7 33C..L S eries
T rapezoidal puls e
T
= 55 °C
di/ dt= 50 A/s
C
30 00
s
D
DR M
tp
1E 1
500
200 0
1E 2
1E 3
1E 4
1E 5
1E 1
1E 2
1E 3
1E 4
50 H z
400
2 500
100
1000
15 00
200
Puls e B asewidth (s)
500 0
S nubbe r circuit
R
= 10 o hms
C = 0.47 F
V = 8 0% V
s
D
DR M
S T 733C..L S eries
T rape zoida l puls e
T
= 4 0°C
d i/ dt= 1 00A/s
C
1E 4
500
2 000
3 000
1E 1
1 E 2
1E 3
1E 4
50 H z
40 0
25 00
100
100 0
150 0
20 0
Puls e B a sewidth (s)
S nub ber circuit
R
= 10 ohms
C = 0.47 F
V = 80% V
3 000
s
D
DR M
S T 7 33C..L S eries
T rapezoidal puls e
T
= 55 °C
di/ dt= 10 0A/s
C
tp
1E1
500
2000
1E 1
1E 2
1E 3
1E 4
1E 5
1 E 11 E 2
1 E 31 E 4
P u lse B ase w id th ( s)
2 0 jo ule s pe r puls e
2
1
0.5
10
5
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t(
A
)
3
ST7 33C ..L Serie s
Sinus oid a l p uls e
0.4
0.3
tp
1E 4 1E 1
1 E 2
1 E 3
1 E 4
P u lse B ase w id th ( s)
20 jo ule s p er p u ls e
2
1
0. 5
10
5
0. 4
0.3
ST73 3C ..L Serie s
Re ct a ng ula r p ulse
di/d t = 50 A/s
tp
1E 1
3
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