参数资料
型号: ST7FL19F1MATRE
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDSO20
封装: 0.300 INCH, LEAD FREE, PLASTIC, SOP-20
文件页数: 14/138页
文件大小: 2515K
代理商: ST7FL19F1MATRE
ST7L15, ST7L19
110/138
ELECTRICAL CHARACTERISTICS (cont’d)
13.6 MEMORY CHARACTERISTICS
13.6.1 RAM and Hardware Registers
TA = -40 to +125°C, unless otherwise specified.
13.6.2 Flash Program Memory
TA = -40 to +85°C, unless otherwise specified
13.6.3 EEPROM Data Memory
TA = -40 to +125°C, unless otherwise specified
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Guaranteed by Design. Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
Refer to operating range of
VDD with TA, section 13.3.1
3.0
5.5
V
tprog
Programming time for 1~32 bytes2)
TA =40 to +85°C
5
10
ms
Programming time for 1.5 Kbytes
TA = 25°C
0.24
0.48
s
tRET
4)
Data retention
TA = 55°C
3)
20
years
NRW
Write erase cycles
TPROG = 25°C
1K
cycles
TPROG = 85°C
300
IDD
Supply current
Read / Write / Erase modes
fCPU = 8 MHz, VDD = 5.5V
2.65)
mA
No Read/No Write Mode
100
A
Power down mode / HALT
0
0.1
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM write/
erase
Refer to operating range of
VDD with TA, section 13.3.1
3.0
5.5
V
tprog
Programming time for 1~32 bytes
TA =40 to +125°C
5
10
ms
tRET
4)
Data retention with 1k cycling
(TPROG = 40 to +125°C
TA = 55°C
3)
20
years
Data retention with 10k cycling
(TPROG = 40 to +125°C)
10
Data retention with 100k cycling
(TPROG = 40 to +125°C)
1
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