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参数资料
| 型号： | ST7FLCD1G9M1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDSO28 |
| 封装： | ROHS COMPLIANT, SO-28 |
| 文件页数： | 21/96页 |
| 文件大小： | 846K |
| 代理商： | ST7FLCD1G9M1 |
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Flash Program Memory
ST7FLCD1
5
Flash Program Memory
5.1
Introduction
The ST7 dual voltage High Density Flash (HDFlash) is a non-volatile memory that can be
electrically erased as a single block or by individual sectors and programmed on a byte-by-byte
basis using an external Vpp supply.
HDFlash devices can be programmed and erased off-board (plugged in a programming tool) or on-
board using In-Circuit Programming (ICP) and In-Application Programming (IAP).
The array matrix organization allows each sector to be erased and reprogrammed without affecting
other sectors.
5.2
Main Features
● Three Flash programming modes:
- Insertion in a programming tool. In this mode, all sectors including option bytes can be
programmed or erased.
- ICP (In-Circuit Programming). In this mode, all sectors including option bytes can be
programmed or erased without removing the device from the application board.
- IAP (In-Application programming). In this mode, all sectors except Sector 0 can be
programmed or erased without removing the device from the application board and when the
application is running.
● ICT (In-Circuit Testing) for downloading and executing user application test patterns in RAM
● Read-out protection against piracy
● Register Access Security System (RASS) to prevent accidental programming or erasing.
5.3
Structure
The Flash memory is organized in sectors and can be used for both code and data storage.
Depending on the overall size of the Flash memory in the microcontroller device, three user sectors
are available. Each sector is independently erasable. Thus, having to completely erase the entire
Flash memory is not necessary when only partial erasing is required.
The first two sectors have a fixed size of 4 Kbytes (see Figure 11). They are mapped in the upper
part of the ST7 addressing space. The reset and interrupt vectors are located in Sector 0 (F000h to
FFFFh).
5.4
Program Memory Read-out Protection
The read-out protection is enabled through an option bit.
When this option is selected, the programs and data stored in the program memory (Flash or ROM)
are protected against read-out piracy (including a re-write protection). In Flash devices, when this
protection is removed by reprogramming the Option Byte, the entire program memory is first
automatically erased. Refer to the Section 5.8 for more details.
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