参数资料
型号: ST7PSCR1R4T1
厂商: 意法半导体
英文描述: 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER
中文描述: 8位低功耗,全速USB微控制器与16K的闪存,768内存,智能卡的I /楼,计时器
文件页数: 76/102页
文件大小: 1413K
代理商: ST7PSCR1R4T1
ST7SCR
76/102
14 ELECTRICAL CHARACTERISTICS
14.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices for protecting the in-
puts against damage due to high static voltages,
however it is advisable to take normal precautions
to avoid appying any voltage higher than the spec-
ified maximum rated voltages.
For proper operation it is recommended that V
I
and V
be higher than V
and lower than V
.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (V
DD
or V
SS
).
Power Considerations
. The average chip-junc-
tion temperature, T
J
, in Celsius can be obtained
from:
T
J
=
TA + PD x RthJA
Where:
T
A
=
Ambient Temperature.
RthJA =Package thermal resistance
(junction-to ambient).
P
D
=
P
INT
+ P
PORT
.
P
INT
= I
DD
x V
DD
(chip internal power).
P
PORT
=Port power dissipation
determined by the user)
Stresses above those listed as “absolute maxi-
mum ratings” may cause permanent damage to
the device. This is a stress rating only and func-
tional operation of the device at these conditions is
not implied. Exposure to maximum rating for ex-
tended periods may affect device reliability.
General Warning:
Direct connection to V
or V
of the I/O pins could damage the device in case of program counter
corruption (due to unwanted change of the I/O configuration). To guarantee safe conditions, this connection has to be
done through a typical 10K
pull-up or pull-down resistor.
Thermal Characteristics
Symbol
Ratings
Value
Unit
V
DD
- V
SS
V
IN
V
OUT
ESD
ESDCard
I
VDD_i
I
VSS_i
Supply voltage
Input voltage
Output voltage
ESD susceptibility
ESD susceptibility for card pads
Total current into V
DD_i
(source)
Total current out of V
SS_i
(sink)
6.0
V
V
V
V
V
V
SS
- 0.3 to V
DD
+ 0.3
V
SS
- 0.3 to V
DD
+ 0.3
2000
4000
250
250
mA
Symbol
Ratings
Value
Unit
R
thJA
Package thermal resistance
TQFP64
SO24
60
80
150
°C/W
T
Jmax
T
STG
PD
Max. junction temperature
Storage temperature range
Power dissipation (maximum value)
°C
°C
mW
-65 to +150
500
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