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| 型号： | ST7PSCR1R4T1 |
| 厂商： | 意法半导体 |
| 英文描述： | 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER |
| 中文描述： | 8位低功耗，全速USB微控制器与16K的闪存，768内存，智能卡的I /楼，计时器 |
| 文件页数： | 77/102页 |
| 文件大小： | 1413K |
| 代理商： | ST7PSCR1R4T1 |
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ST7SCR
77/102
14.2 RECOMMENDED OPERATING CONDITIONS
(Operating conditions T
A
= 0 to +70°C unless otherwise specified)
Note 1:
Positive injection
The I
INJ+
is done through protection diodes insulated from the substrate of the die.
Note 2:
For SmartCard I/Os, V
CARD
has to be considered.
Note 3:
Negative injection
– The I
INJ-
is done through protection diodes NOT INSULATED from the substrate of the die. The draw-
back is a small leakage (few μA) induced inside the die when a negative injection is performed. This leak-
age is tolerated by the digital structure, but it acts on the analog line according to the impedance versus
a leakage current of few μA (if the MCU has an AD converter). The effect depends on the pin which is
submitted to the injection. Of course, external digital signals applied to the component must have a max-
imum impedance close to 50K
.
Location of the negative current injection:
– Pure digital pins can tolerate 1.6mA. In addition, the best choice is to inject the current as far as possible
from the analog input pins.
General Note
: When several inputs are submitted to a current injection, the maximum I
INJ
is the sum of
the positive (resp. negative) currrents (instantaneous values).
GENERAL
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DD
f
OSC
T
A
Supply voltage
External clock source
Ambient temperature range
4.0
5.5
V
4
MHz
°C
0
70
CURRENT INJECTION ON I/O PORT AND CONTROL PINS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
INJ+
Total positive injected current
(1)
V
EXTERNAL
> V
DD
(Standard I/Os)
V
EXTERNAL
> V
SC_PWR
(Smartcard I/Os)
V
EXTERNAL
< V
SS
Digital pins
Analog pins
20
mA
I
INJ-
Total negative injected current
(2,3)
20
mA
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