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参数资料
| 型号： | STB1132 |
| 厂商： | AUK Corp |
| 英文描述： | PNP Silicon Transistor |
| 中文描述： | 进步党硅晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 89K |
| 代理商： | STB1132 |
KST-8001-002
2
STB1132
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Collector-Base voltage
V
CBO
Collector-Emitter voltage
V
CEO
Emitter-Base voltage
V
EBO
Collector current
I
C
P
C
Collector dissipation
P
C
Junction temperature
T
j
Storage temperature
T
stg
Ratings
-40
Unit
V
-32
V
-5
V
-1
A
0.5
*
2
W
150
°
C
°
C
-55~ 150
* : When mounted on 40
×
40
×
0.8mm ceramic substate
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
= -50
μ
A, I
E
= 0
-40
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
= -1mA, I
B
= 0
-32
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
= -50
μ
A, I
C
= 0
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
= -20V, I
E
= 0
-
-
-0.1
μ
A
Collector cut-off current
I
CES
V
CE
= -30V, I
C
= 0
-
-
-0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -4V, I
C
= 0
-
-
-0.1
μ
A
DC current gain
h
FE
*
V
CE
= -3V, I
C
= -0.1A
100
-
320
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
= -500mA, I
B
= -50mA
V
CE
= -5V, I
C
= -50mA,
f= 30MHz
V
CB
= -10V, I
E
= 0, f= 1MHz
-
-0.2
-0.8
V
Transition frequency
f
T
-
150
-
MHz
Collector output capacitance
C
ob
-
20
30
pF
* : h
FE
rank / O : 100 ~ 200, Y : 160 ~ 320
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