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参数资料
| 型号： | STB11NK40ZT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|对263AB |
| 文件页数： | 1/12页 |
| 文件大小： | 195K |
| 代理商： | STB11NK40ZT4 |
1/12
August 2002
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4
-11A TO-220/TO-220FP/D
2
PAK/I
2
PAK
MDmesh
Power MOSFET
(*)Limited only by maximum temperature allowed
(1)I
SD
<11A, di/dt<400A/
μ
s, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
n
TYPICAL R
DS
(on) = 0.4
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH
horizontal
layout. Theresulting producthas an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh
family isvery suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45
< 0.45
< 0.45
< 0.45
11 A
11 A
11 A
11 A
Parameter
Value
Unit
STP(B)11NM60(-1)
STP11NM60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
±
30
V
11
11 (*)
A
7
7 (*)
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
44
44 (*)
A
160
35
W
1.28
0.28
W/
°
C
V/ns
dv/dt(1)
Peak Diode Recovery voltage slope
15
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
V
°
C
°
C
T
stg
Storage Temperature
–65 to 150
T
j
Max. Operating Junction Temperature
150
TO-220
1
2
3
123
I
2
PAK
1
2
3
TO-220FP
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| STB11NB40-1 | N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET |
| STB11NB40T4 | N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET |
| STB11NM60 | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| STB11NM60-1 | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| STB11NM80 | N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB11NK50Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB11NK50Z_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET |
| STB11NK50ZT4 | 功能描述:MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB11NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 11A D2PAK |
| STB11NM60-1 | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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