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参数资料
| 型号： | STB11NK40ZT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|对263AB |
| 文件页数： | 3/12页 |
| 文件大小： | 195K |
| 代理商： | STB11NK40ZT4 |
3/12
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe OperatingArea for TO-220/D2PAK/I2PAK
Test Conditions
V
DD
= 300V, I
D
= 5.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
20
ns
t
r
Rise Time
20
ns
Q
g
Q
gs
Q
gd
TotalGate Charge
V
DD
= 400V, I
D
= 11A,
V
GS
= 10V
30
nC
Gate-Source Charge
10
nC
Gate-Drain Charge
15
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 11A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
6
ns
Fall Time
11
ns
Cross-over Time
19
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
11
A
Source-drain Current (pulsed)
44
A
Forward On Voltage
I
SD
= 11A, V
GS
= 0
I
SD
= 11A, di/dt = 100A/
μ
s,
V
DD
= 100 V, T
j
= 25
°
C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
390
3.8
19.5
ns
μ
C
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11A, di/dt = 100A/
μ
s,
V
DD
= 100 V, T
j
= 150
°
C
(see test circuit, Figure 5)
570
5.7
20
ns
μ
C
A
Safe Operating Area for TO-220FP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STB11NK50Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB11NK50Z_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET |
| STB11NK50ZT4 | 功能描述:MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB11NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 11A D2PAK |
| STB11NM60-1 | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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