参数资料
型号: STB130NH02L
英文描述: N-CHANNEL 24V - 0.0034 OHM - 120A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION
中文描述: N沟道24V的- 0.0034欧姆- 120A条采用D2PAK STRIPFET三功率MOSFET的DC - DC转换
文件页数: 11/11页
文件大小: 410K
代理商: STB130NH02L
11/11
STB130NH02L
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相关PDF资料
PDF描述
STB130NH02LT4 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 90A I(D) | TO-263AB
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相关代理商/技术参数
参数描述
STB130NH02LT4 功能描述:MOSFET N-Ch 24 Volt 90 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STB130NS04ZB 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
STB130NS04ZB-1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET
STB130NS04ZBT4 功能描述:MOSFET N Ch CLAMPED 8mOhm 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STB135N10 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET