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| 型号： | STB130NH02L |
| 英文描述： | N-CHANNEL 24V - 0.0034 OHM - 120A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION |
| 中文描述： | N沟道24V的- 0.0034欧姆- 120A条采用D2PAK STRIPFET三功率MOSFET的DC - DC转换 |
| 文件页数： | 9/11页 |
| 文件大小： | 410K |
| 代理商： | STB130NH02L |
9/11
STB130NH02L
SW1
SW2
APPENDIX A
Buck Converter: Power Losses Estimation
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is rmoved to allow for a safer working junction
temperature.
The low side (
SW2
) device requires:
Very low R
DS(on)
to reduce conduction losses
Small Q
gls
to reduce the gate charge losses
Small C
oss
to reduce losses due to output capacitance
Small Q
rr
to reduce losses on SW
1
during its turn-on
The C
gd
/C
gs
ratio lower than V
th
/V
gg
ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (
SW1)
device requires:
Small R
g
and L
s
to allow higher gate current peak an to limit the voltage
feedback on the gate
Small Q
g
to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce the conduction losses.
相关PDF资料 |
PDF描述 |
|---|---|
| STB130NH02LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 90A I(D) | TO-263AB |
| STB13NK60Z-1 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60Z | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB13NK60ZT4 | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB130NH02LT4 | 功能描述:MOSFET N-Ch 24 Volt 90 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB130NS04ZB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET |
| STB130NS04ZB-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET |
| STB130NS04ZBT4 | 功能描述:MOSFET N Ch CLAMPED 8mOhm 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB135N10 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET |
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