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参数资料
| 型号： | STB6NA60T4 |
| 英文描述： | Resettable Fuse; Operating Voltage Max:30VDC; Resistance:2.9ohm; Holding Current:0.2A; Tripping Current:0.4A; Fuse Terminals:SMT Caps; Initial Resistance Min:0.8ohm; Interrupting Current Max:100A; Leaded Process Compatible:Yes |
| 中文描述： | 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.5AI（四）|对263AB |
| 文件页数： | 10/10页 |
| 文件大小： | 130K |
| 代理商： | STB6NA60T4 |
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consequences of use ofsuch informationnor forany infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication orotherwise under any patentorpatentrightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized for use as criticalcomponents in lifesupportdevices or systems withoutexpress
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STB6NA60
10/10
相关PDF资料 |
PDF描述 |
|---|---|
| STB6NA80-1 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR |
| STB6NA80T4 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB |
| STB6NC60T4 | Resettable Fuse; Operating Voltage Max:6V; Holding Current:1.5uA; Tripping Current:3uA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Steady State Current Max:40A; Voltage Rating:6V |
| STB6NC90ZT4 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA |
| STB70NFS03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB6NA80 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STB6NA80-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR |
| STB6NA80T4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB |
| STB6NB50 | 功能描述:MOSFET N-Ch 500 Volt 6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB6NB50-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-262AA |
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