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参数资料
| 型号： | STB6NA80T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 5.7AI（四）|对263AB |
| 文件页数： | 1/10页 |
| 文件大小： | 130K |
| 代理商： | STB6NA80T4 |
STB6NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPICALR
DS(on)
= 1
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGESPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGE IN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
DGR
600
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
30
6.5
V
I
D
I
D
A
4.3
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
26
A
P
tot
125
W
Derating Factor
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.2
I
D
STB6NA60
600 V
6.5 A
October1995
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
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| STB6NB90T4 | 功能描述:MOSFET N-CH 900V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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