- 您现在的位置：买卖IC网 > PDF目录372326 > STB6NA80T4 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB PDF资料下载
参数资料
| 型号： | STB6NA80T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 5.7AI（四）|对263AB |
| 文件页数： | 3/10页 |
| 文件大小： | 130K |
| 代理商： | STB6NA80T4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 3 A
V
GS
= 10 V
35
90
50
125
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 6 A
V
GS
= 10 V
200
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 3 A
V
GS
= 10 V
54
8
23
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 6 A
V
GS
= 10 V
80
20
115
110
30
155
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
I
SD
= 6.5 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
V
DD
= 100 V
(see test circuit, figure 5)
600
9
30
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimitedby safe operating area
Safe Operating Area
ThermalImpedance
STB6NA60
3/10
相关PDF资料 |
PDF描述 |
|---|---|
| STB6NC60T4 | Resettable Fuse; Operating Voltage Max:6V; Holding Current:1.5uA; Tripping Current:3uA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Steady State Current Max:40A; Voltage Rating:6V |
| STB6NC90ZT4 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA |
| STB70NFS03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB |
| STB70NH03L | N-CHANNEL 30V - 0.0075 OHM - 60A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION |
| STB70NF02LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 70A I(D) | TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB6NB50 | 功能描述:MOSFET N-Ch 500 Volt 6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB6NB50-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-262AA |
| STB6NB50T4 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-263AB |
| STB6NB90 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET |
| STB6NB90T4 | 功能描述:MOSFET N-CH 900V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。