参数资料
型号: STB6NA60T4
英文描述: Resettable Fuse; Operating Voltage Max:30VDC; Resistance:2.9ohm; Holding Current:0.2A; Tripping Current:0.4A; Fuse Terminals:SMT Caps; Initial Resistance Min:0.8ohm; Interrupting Current Max:100A; Leaded Process Compatible:Yes
中文描述: 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6.5AI(四)|对263AB
文件页数: 6/10页
文件大小: 130K
代理商: STB6NA60T4
Switching Safe OperatingArea
Source-drainDiode Forward Characteristics
Fig. 1:
UnclampedInductiveLoad TestCircuit
AccidentalOverload Area
Fig. 2:
UnclampedInductiveWaveform
STB6NA60
6/10
相关PDF资料
PDF描述
STB6NA80-1 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
STB6NA80T4 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
STB6NC60T4 Resettable Fuse; Operating Voltage Max:6V; Holding Current:1.5uA; Tripping Current:3uA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Steady State Current Max:40A; Voltage Rating:6V
STB6NC90ZT4 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA
STB70NFS03LT4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
相关代理商/技术参数
参数描述
STB6NA80 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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STB6NB50-1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-262AA