- 您现在的位置：买卖IC网 > PDF目录358423 > STD12N05L (意法半导体) N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N沟道增强模式低阈值功率MOSFET) PDF资料下载
参数资料
| 型号： | STD12N05L |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N沟道增强模式低阈值功率MOSFET) |
| 中文描述： | N沟道增强模式的低阈值功率MOS晶体管（不适用沟道增强模式低阈值功率MOSFET的） |
| 文件页数： | 1/10页 |
| 文件大小： | 175K |
| 代理商： | STD12N05L |
STD12N05L
STD12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.115
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
LOGIC LEVEL COMPATIBLE INPUT
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.15
< 0.15
I
D
STD12N05L
50 V
12 A
STD12N06L
60 V
12 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD12N05L
STD12N06L
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
60
V
V
DGR
50
60
V
V
GS
±
15
12
V
I
D
A
I
D
8
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
48
A
45
W
Derating Factor
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
November 1996
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相关PDF资料 |
PDF描述 |
|---|---|
| STF-H303UWW | T-1 SINGLE COLOR LED, ULTRA WHITE, 3 mm |
| STF202-22T1 | USB Filter with ESD Protection |
| STI728107D1-70VGR | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STI728107D1-70VGU | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STPCG1MBRD | INTERCONNECTION DEVICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STD12N05L-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
| STD12N05LT4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N05T4 | 功能描述:MOSFET N-Ch 50 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD12N06 | 功能描述:MOSFET TO-251 N-CH 60V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD12N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251 |
发布紧急采购，3分钟左右您将得到回复。