- 您现在的位置：买卖IC网 > PDF目录358423 > STD12N05L (意法半导体) N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N沟道增强模式低阈值功率MOSFET) PDF资料下载
参数资料
| 型号： | STD12N05L |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N沟道增强模式低阈值功率MOSFET) |
| 中文描述： | N沟道增强模式的低阈值功率MOS晶体管（不适用沟道增强模式低阈值功率MOSFET的） |
| 文件页数： | 10/10页 |
| 文件大小： | 175K |
| 代理商： | STD12N05L |
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics -Printedin Italy- All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil -Canada -China - France- Germany - HongKong - Italy - Japan- Korea-Malaysia - Malta- Morocco - TheNetherlands -
Singapore - Spain- Sweden- Switzerland -Taiwan - Thailand- UnitedKingdom - U.S.A
.
STD12N05L/STD12N06L
10/10
相关PDF资料 |
PDF描述 |
|---|---|
| STF-H303UWW | T-1 SINGLE COLOR LED, ULTRA WHITE, 3 mm |
| STF202-22T1 | USB Filter with ESD Protection |
| STI728107D1-70VGR | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STI728107D1-70VGU | 8M X 72 EDO DRAM MODULE, 70 ns, DMA168 |
| STPCG1MBRD | INTERCONNECTION DEVICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STD12N05L-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
| STD12N05LT4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N05T4 | 功能描述:MOSFET N-Ch 50 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD12N06 | 功能描述:MOSFET TO-251 N-CH 60V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD12N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251 |
发布紧急采购，3分钟左右您将得到回复。