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参数资料
| 型号： | STD5NM50T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 5A条（丁）|对252AA |
| 文件页数： | 3/8页 |
| 文件大小： | 87K |
| 代理商： | STD5NM50T4 |
3/8
STD5N20
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 100 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
Turn-on Delay Time
18
ns
t
r
Rise Time
30
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
V
DD
= 160V, I
D
= 6 A,
V
GS
= 10V
19
27
nC
Gate-Source Charge
4.5
nC
Gate-Drain Charge
7.5
nC
Parameter
Test Conditions
V
DD
= 160V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
40
ns
Fall Time
10
ns
Cross-over Time
65
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
6
A
Source-drain Current (pulsed)
24
A
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
I
SD
=6 A, di/dt = 100A/
μ
s
V
DD
= 100V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
155
ns
Reverse Recovery Charge
700
nC
Reverse Recovery Current
9
A
Thermal Impedance
Safe Operating Area
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STD5NM50T4 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:N Channel |
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| STD5NM60-1 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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