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参数资料
| 型号： | STD7NS20T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 7A条（丁）|对252AA |
| 文件页数： | 1/10页 |
| 文件大小： | 163K |
| 代理商： | STD7NS20T4 |
1/10
July 2002
STD7NB20
STD7NB20-1
N-CHANNEL 200V - 0.3
- 7A DPAK/IPAK
PowerMESH
MOSFET
I
TYPICAL R
DS
(on) = 0.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD7NB20
STD7NB20-1
200 V
200 V
< 0.40
< 0.40
7 A
7 A
Parameter
Value
Unit
200
V
200
±
30
V
V
7
A
5
A
28
A
55
W
0.44
W/
°
C
V/ns
°
C
°
C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
T
stg
T
j
Storage Temperature
– 65 to 150
Max. Operating Junction Temperature
150
(1) I
SD
≤
7A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
jMAX
INTERNAL SCHEMATIC DIAGRAM
1
3
TO-252
DPAK
3
2
1
IPAK
TO-251
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