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参数资料
| 型号： | STD7NS20T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 7A条（丁）|对252AA |
| 文件页数： | 2/10页 |
| 文件大小： | 163K |
| 代理商： | STD7NS20T4 |
STD7NB20 / STD7NB20-1
2/10
THERMAL DATA
Rthj-case
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
2.27
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
100
T
l
Maximum Lead Temperature For Soldering Purpose
275
Parameter
Max Value
7
Unit
A
100
mJ
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
200
Typ.
Max.
Unit
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
=
±
30V
1
μ
A
μ
A
nA
10
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 3.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.30
0.40
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
2
Typ.
3
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
470
650
pF
Output Capacitance
135
190
pF
Reverse Transfer
Capacitance
22
30
pF
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