参数资料
型号: STD83003-1
英文描述: BJT
中文描述: 双极型晶体管
文件页数: 1/8页
文件大小: 82K
代理商: STD83003-1
STD83003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
REVERSEPINS OUT Vs STANDARD IPAK
(TO-251) / DPAK(TO-252) PACKAGES
I
MEDIUMVOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
VERYHIGH SWITCHING SPEED
I
SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGE IN TAPE & REEL (Suffix
”T4”)
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE(Suffix ”-1”)
APPLICATIONS:
I
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The STD83003 is expressly designed for a new
solution to be usedin compact fluorescentlamps,
where it is coupled with the STD93003, its
complementary PNP transistor.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
Parameter
Value
700
400
V
(BR)EBO
Unit
V
V
V
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0,
I
B
= 0.75 A,
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
t
p
< 10
μ
s, T
j
< 150
o
C)
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
1.5
3
0.75
1.5
20
A
A
A
A
W
o
C
o
C
-65 to 150
150
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/8
相关PDF资料
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