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参数资料
| 型号： | STGF7NB60SL |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT |
| 中文描述： | N沟道第7A - 600V的-对220FP PowerMESH IGBT的 |
| 文件页数： | 3/9页 |
| 文件大小： | 258K |
| 代理商： | STGF7NB60SL |
3/9
STGF7NB60SL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
fs
Forward Transconductance
C
ies
C
oes
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
I
CL
Turn-Off SOA Minimum
Current
Table 8: Switching On
Symbol
t
d(on)
t
r
Table 9: Switching Off
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
(**)Turn-off losses include also the tail of the collector current.
Test Conditions
V
CE
= 15 V
,
I
C
= 7 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
5
Max.
Unit
S
Input Capacitance
Output Capacitance
800
60
10
pF
pF
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 5V
(see Figure 20)
16
2.5
8.5
22
nC
nC
nC
V
clamp
= 480 V
,
Tj = 125
°
C
R
G
= 1 K
,
V
GE
=5V
V
ce
= 0.5 V
BR(CES)
, V
GE
=5V
,
Tj = 125
°
C , R
G
= 1K
20
A
tscw
Short Circuit Withstand Time
14
μs
Parameter
Test Conditions
V
CC
= 480 V, I
C
= 7 A R
G
=1K
,
V
GE
= 5 V
(see Figure 18)
V
CC
= 480 V, I
C
= 7 A R
G
=1K
V
GE
= 5 V,Tj = 125
°
C
Min.
Typ.
1.1
0.25
Max.
Unit
μs
μs
Turn-on Delay Time
Current Rise Time
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on Switching Losses
45
2.7
A/μs
mJ
Parameter
Test Conditions
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 1K
, V
GE
= 5 V
(see Figure 18)
Min.
Typ.
Max.
Unit
Cross-over Time
2.7
μs
Off Voltage Rise Time
1.6
μs
Delay Time
5.2
μs
Current Fall Time
1.1
μs
m
J
E
off
(**)
Turn-off Switching Loss
4.1
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 1K
, V
GE
= 5 V
Tj = 125
°
C
(see Figure 18)
4.4
μs
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
Off Voltage Rise Time
2.4
μs
Delay Time
6.4
μs
Fall Time
1.7
μs
m
J
Turn-off Switching Loss
7.1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STGF7NB60SL_0409 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220FP PowerMESH TM IGBT |
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| STGFL6NC60D | 功能描述:IGBT 晶体管 N Ch 500V 0.250 Ohm 12A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGFL6NC60DI | 功能描述:IGBT 晶体管 6 A 600V HYPER FAST IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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