参数资料
型号: STM32F103VDT7XXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-100
文件页数: 61/122页
文件大小: 1599K
代理商: STM32F103VDT7XXX
STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Doc ID 14611 Rev 6
5.3.2
Operating conditions at power-up / power-down
The parameters given in Table 11 are derived from tests performed under the ambient
temperature condition summarized in Table 10.
Table 11.
Operating conditions at power-up / power-down
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 12 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
0
s/V
VDD fall time rate
20
Table 12.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.1
2.18
2.26
V
PLS[2:0]=000 (falling edge)
2
2.08
2.16
V
PLS[2:0]=001 (rising edge)
2.19
2.28
2.37
V
PLS[2:0]=001 (falling edge)
2.09
2.18
2.27
V
PLS[2:0]=010 (rising edge)
2.28
2.38
2.48
V
PLS[2:0]=010 (falling edge)
2.18
2.28
2.38
V
PLS[2:0]=011 (rising edge)
2.38
2.48
2.58
V
PLS[2:0]=011 (falling edge)
2.28
2.38
2.48
V
PLS[2:0]=100 (rising edge)
2.47
2.58
2.69
V
PLS[2:0]=100 (falling edge)
2.37
2.48
2.59
V
PLS[2:0]=101 (rising edge)
2.57
2.68
2.79
V
PLS[2:0]=101 (falling edge)
2.47
2.58
2.69
V
PLS[2:0]=110 (rising edge)
2.66
2.78
2.9
V
PLS[2:0]=110 (falling edge)
2.56
2.68
2.8
V
PLS[2:0]=111 (rising edge)
2.76
2.88
3
V
PLS[2:0]=111 (falling edge)
2.66
2.78
2.9
V
VPVDhyst
PVD hysteresis
100
mV
VPOR/PDR
Power on/power down
reset threshold
Falling edge
1.8(1)
1.
The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
VPDRhyst
PDR hysteresis
40
mV
TRSTTEMPO
(2)
2.
Guaranteed by design, not tested in production.
Reset temporization
1
2.5
4.5
mS
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