参数资料
型号: STM32F105RBT7XXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP64
封装: 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件页数: 43/95页
文件大小: 1007K
代理商: STM32F105RBT7XXX
Electrical characteristics
STM32F105xx, STM32F107xx
48/95
Doc ID 15274 Rev 4
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
G
Stop or Standby mode: the clock source is the RC oscillator
G
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
Table 24.
HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
1(3)
3. Guaranteed by design, not tested in production.
%
Factory-
calibrated(4)
4. Based on characterization, not tested in production.
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)
(4)
HSI oscillator
startup time
12
s
IDD(HSI)
(4)
HSI oscillator
power consumption
80
100
A
Table 25.
LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(2)
2. Based on characterization, not tested in production.
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time
85
s
IDD(LSI)
(3)
LSI oscillator power consumption
0.65
1.2
A
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