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参数资料
型号： STM32F105RBT7XXX
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP64
封装： 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件页数： 68/95页
文件大小： 1007K
代理商： STM32F105RBT7XXX
Electrical characteristics
STM32F105xx, STM32F107xx
70/95
Doc ID 15274 Rev 4
Note:
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in
Section 5.3.12 does not affect the ADC accuracy.
Table 53.
ADC accuracy - limited test conditions(1)
1. ADC DC accuracy values are measured after internal calibration.
Symbol
Parameter
Test conditions
Typ
Max(2)
2. Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k ,
VDDA = 3 V to 3.6 V
TA = 25 °C
Measurements made after
ADC calibration
±1.3
±2
LSB
EO
Offset error
±1
±1.5
EG
Gain error
±0.5
±1.5
ED
Differential linearity error
±0.7
±1
EL
Integral linearity error
±0.8
±1.5
Table 54.
ADC accuracy(1) (2)
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol
Parameter
Test conditions
Typ
Max(3)
3. Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k ,
VDDA = 2.4 V to 3.6 V
Measurements made after
ADC calibration
±2
±5
LSB
EO
Offset error
±1.5
±2.5
EG
Gain error
±1.5
±3
ED
Differential linearity error
±1
±2
EL
Integral linearity error
±1.5
±3
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相关代理商/技术参数
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