参数资料
型号: STM32F105VCT6XXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数: 48/95页
文件大小: 1007K
代理商: STM32F105VCT6XXX
Electrical characteristics
STM32F105xx, STM32F107xx
52/95
Doc ID 15274 Rev 4
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE
IEC61967-2 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
G
A supply overvoltage is applied to each power supply pin
G
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 32.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz
8/72 MHz
SEMI
Peak level
VDD 3.3 V, TA 25 °C,
LQFP100 package
compliant with IEC61967-2
0.1 to 30 MHz
9
dBV
30 to 130 MHz
26
13
130 MHz to 1GHz
25
31
SAE EMI Level
4
-
Table 33.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA +25 °C conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA +25 °C conforming to
JESD22-C101
II
500
1. Based on characterization results, not tested in production.
Table 34.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +105 °C conforming to JESD78A
II level A
相关PDF资料
PDF描述
STM32F105VBT6TR 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
STM32F105VCT7TR 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
STM32F105V8T6XXX 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
STM32F105VCT6TR 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
STM32F107RBT6XXX 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP64
相关代理商/技术参数
参数描述
STM32F105VCT7 功能描述:ARM微控制器 - MCU 32-Bit Cortex 64Kb Connectivity Line RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F107RB 制造商:STMicroelectronics 功能描述:
STM32F107RBT6 功能描述:ARM微控制器 - MCU 32BIT Cortex 64/25 CONNECTIVITY LINE M3 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F107RCT6 功能描述:ARM微控制器 - MCU 32BIT Cortex 64/25 CONNECTIVITY LINE M3 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F107RCT6TR 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 256K Flash 6KB RAM RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT