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参数资料
| 型号： | STM32F105VCT7TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 14 MM, ROHS COMPLIANT, LQFP-100 |
| 文件页数： | 47/95页 |
| 文件大小： | 1007K |
| 代理商： | STM32F105VCT7TR |
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STM32F105xx, STM32F107xx
Electrical characteristics
Doc ID 15274 Rev 4
51/95
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
G
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
G
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 31. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
G
Corrupted program counter
G
Unexpected reset
G
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 31.
EMS characteristics
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 75 MHz, conforms to
IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 75 MHz, conforms to
IEC 61000-4-2
4A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F107RB | 制造商:STMicroelectronics 功能描述: |
| STM32F107RBT6 | 功能描述:ARM微控制器 - MCU 32BIT Cortex 64/25 CONNECTIVITY LINE M3 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F107RCT6 | 功能描述:ARM微控制器 - MCU 32BIT Cortex 64/25 CONNECTIVITY LINE M3 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F107RCT6TR | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 256K Flash 6KB RAM RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F107RCT7 | 功能描述:ARM微控制器 - MCU 32-Bit ARM Cortex 256kb Connectivity RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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