参数资料
型号: STM8AF51AATBXXXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP80
封装: 14 X 14 MM, ROHS COMPLIANT, LQFP-80
文件页数: 91/118页
文件大小: 2173K
代理商: STM8AF51AATBXXXX
Electrical characteristics
STM8AF51xx, STM8AF61xx
Doc ID 14395 Rev 6
Figure 21.
HSE oscillator circuit diagram
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
Equation 1
where gmcrit can be calculated with the crystal parameters as follows:
Equation 2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
Table 45.
HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
220
k
Ω
CL1/CL2
(1)
Recommended load capacitance
20
pF
gm
Oscillator trans conductance
5
mA/V
tSU(HSE)
(2)
Startup time
VDD is
stabilized
—2.8
ms
1.
The oscillator needs two load capacitors, CL1 and CL2, to act as load for the crystal. The total load capacitance (Cload) is
(CL1 * CL2)/(CL1 + CL2). If CL1 = CL2, Cload = CL1/2. Some oscillators have built-in load capacitors, CL1 and CL2.
2.
This value is the startup time, measured from the moment it is enabled (by software) until a stabilized 24 MHz oscillation is
reached. It can vary with the crystal type that is used.
OSCOUT
OSCIN
fHSE to core
CL1
CL2
RF
STM8A
Resonator
Current control
gm
Rm
Cm
Lm
CO
Resonator
g
m
g
mcrit
g
mcrit
2
Π
×
HSE
f
×
()
2
R
m
×
2Co
C
+
()
2
=
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