参数资料
型号: STM8AF6126TBX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PQFP32
封装: 7 X 7 MM, ROHS COMPLIANT, LQFP-32
文件页数: 77/99页
文件大小: 881K
代理商: STM8AF6126TBX
STM8AF61xx, STM8AF62xx
Electrical characteristics
Doc ID 14952 Rev 4
Electromagnetic interference (EMI)
Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin
loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 59.
EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fCPU
(1)
1.
Data based on characterization results, not tested in production.
8
MHz
16
MHz
SEMI
Peak level
VDD = 5 V,
TA = 25 °C,
LQFP80 package
conforming to SAE J
1752/3
0.1 MHz to 30 MHz
15
17
dBV
30 MHz to 130 MHz
18
22
130 MHz to 1 GHz
-1
3
SAE EMI level
2
2.5
Table 60.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Data based on characterization results, not tested in production
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = 25°C, conforming to
JESD22-A114
3A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA= 25°C, conforming to
JESD22-C101
3
500
VESD(MM)
Electrostatic discharge voltage
(Machine model)
TA= 25°C, conforming to
JESD22-A115
B
200
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