参数资料
型号: STM8AF6126TBY
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PQFP32
封装: 7 X 7 MM, ROHS COMPLIANT, LQFP-32
文件页数: 63/99页
文件大小: 881K
代理商: STM8AF6126TBY
Electrical characteristics
STM8AF61xx, STM8AF62xx
Doc ID 14952 Rev 4
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 51.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
-0.3 V
0.3 x VDD
VIH
Input high level voltage
0.7 x VDD
VDD + 0.3 V
Vhys
Hysteresis(1)
-
0.1 x
VDD
-
VOH
Output high level voltage
Standard I/0, VDD = 5 V,
I = 3 mA
VDD - 0.5 V
-
Standard I/0, VDD = 3 V,
I = 1.5 mA
VDD - 0.4 V
-
VOL
Output low level voltage
High sink and true open
drain I/0, VDD = 5 V
I = 8 mA
--
0.5
V
Standard I/0, VDD = 5 V
I = 3 mA
--
0.6
Standard I/0, VDD = 3 V
I = 1.5 mA
--
0.4
Rpu
Pull-up resistor
VDD = 5 V, VIN = VSS
35
50
65
k
Ω
tR, tF
Rise and fall time
(10% - 90%)
Fast I/Os
Load = 50 pF
--
20(2)
ns
Standard and high sink I/Os
Load = 50 pF
-
Ilkg
Digital input pad leakage
current
VSS VIN VDD
--
±1
A
Ilkg ana
Analog input pad leakage
current
VSS VIN VDD
-40 °C < TA < 125 °C
-
±250
nA
Ilkg ana
Analog input pad leakage
current
VSS VIN VDD
-40 °C < TA < 150 °C
--
TBD
Ilkg(inj)
Leakage current in
adjacent I/O(2)
Injection current ±4 mA
-
±1(2)
A
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
-
60
mA
1.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2.
Data based on characterization results, not tested in production.
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