参数资料
型号: STM8AF62AATBX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP80
封装: 14 X 14 MM, ROHS COMPLIANT, LQFP-80
文件页数: 100/120页
文件大小: 2236K
代理商: STM8AF62AATBX
Electrical characteristics
STM8AF52/62xx, STM8AF51/61xx
Doc ID 14395 Rev 7
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 54.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Low-level input voltage
-0.3 V
0.3 x VDD
VIH
High-level input voltage
0.7 x VDD
VDD + 0.3 V
Vhys
Hysteresis(1)
0.1 x
VDD
VOH
High-level output voltage
Standard I/0, VDD = 5 V,
I = 3 mA
VDD - 0.5 V
Standard I/0, VDD = 3 V,
I = 1.5 mA
VDD - 0.4 V
VOL
Low-level output voltage
High sink and true open
drain I/0, VDD = 5 V
I = 8 mA
——
0.5
V
Standard I/0, VDD = 5 V
I = 3 mA
——
0.6
Standard I/0, VDD = 3 V
I = 1.5 mA
——
0.4
Rpu
Pull-up resistor
VDD = 5 V, VIN = VSS
35
50
65
k
Ω
tR, tF
Rise and fall time
(10% - 90%)
Fast I/Os
Load = 50 pF
——
20(2)
ns
Standard and high sink I/Os
Load = 50 pF
Ilkg
Digital input pad leakage
current
VSS VIN VDD
——
±1
A
Ilkg ana
Analog input pad leakage
current
VSS VIN VDD
-40 °C < TA < 125 °C
±250
nA
VSS VIN VDD
-40 °C < TA < 150 °C
±500
Ilkg(inj)
Leakage current in
adjacent I/O(2)
Injection current ±4 mA
±1(2)
A
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
60
mA
1.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2.
Data based on characterization results, not tested in production.
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