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参数资料
| 型号： | STM8AF62AATBX |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP80 |
| 封装： | 14 X 14 MM, ROHS COMPLIANT, LQFP-80 |
| 文件页数： | 115/120页 |
| 文件大小： | 2236K |
| 代理商： | STM8AF62AATBX |
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Electrical characteristics
STM8AF52/62xx, STM8AF51/61xx
Doc ID 14395 Rev 7
Electromagnetic interference (EMI)
Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin
loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 62.
EMI data
Symbol
Parameter
Conditions
Unit
General
conditions
Monitored
frequency band
Max fCPU
(1)
1.
Data based on characterization results, not tested in production.
8
MHz
16
MHz
24
MHz
SEMI
Peak level
VDD = 5 V,
TA = 25 °C,
LQFP80 package
conforming to SAE
J 1752/3
0.1 MHz to 30 MHz
15
17
22
dBV
30 MHz to 130 MHz
18
22
16
130 MHz to 1 GHz
-1
3
5
SAE EMI level
—
2
2.5
Table 63.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Data based on characterization results, not tested in production
Uni
t
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = 25 °C, conforming to
JESD22-A114
3A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming to
JESD22-C101
3
500
VESD(MM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming to
JESD22-A115
B200
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相关代理商/技术参数 |
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