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参数资料
| 型号： | STP2003PQFP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低电流运算，低反向泄露，低噪声稳压二极管 |
| 文件页数： | 1/20页 |
| 文件大小： | 221K |
| 代理商： | STP2003PQFP |
DATA SHEET
1
STP2000QFP
Master I/O
32-bit SBus Master I/ O Controller
D
ESCRIPTION
The STP2000 Master I/ O Controller is an integrated SBus master device with built-in standard I/ O capabili-
ties for general purpose computing or embedded applications. The STP2000 directly interfaces the CPU
through the system bus, SBus, to three major I/ O channels for peripherals. The I/ O channels include SCSI-II,
ethernet and a parallel port. Together, with the STP2001 Slave I/ O Controller, it provides a complete I/ O
subsystem.
The STP2000 SBus interface is a 32-bit interface that supports both DMA and slave modes. There is data buff-
ering and flow control on each of the I/ O channels. Each channel has access to the SBus through the controller
which is capable of DMA transfers of up to 32-byte bursts. The SBus slave port is used mostly for status and
control.
The STP2000 incorporates an ethernet controller, a Fast 8-bit SCSI-II controller, and a Centronics parallel port
controller in a single package. The SCSI-II channel directly drives external peripherals. The ethernet channel
can be connected to an external transceiver chip that supports twisted pair ethernet or AUI ethernet. The par-
allel port channel can be routed to external transceivers.
Features
Benefits
Single-chip solution to standard SPARC DVMA devices
Compatible with microSPARC, SuperSPARC and any
SBus based system
Supports concurrent 10 MByte/sec SCSI transfers,
1.25 MByte/sec Ethernet transfers, and 4 MByte/sec
Parallel Port transfers
Direct master/slave SBus interface
JTAG internal and boundary SCAN logic
160-pin PQFP packaging
IC is also available from NCR Corp. (PN - NCR89C100)
Saves cost, power, board space, and weight
Standard low-cost solution
Improved system performance
Improved system performance
Improved chip and board level testability
Cost effective packaging
Second source
July 1997
This Material Copyrighted by Its Respective Manufacturer
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STP2003QFP | 制造商:SUN 功能描述: |
| STP200N3LL | 功能描述:N-CHANNEL 30 V, 2 MOHM TYP., 120 制造商:stmicroelectronics 系列:- 包装:管件 零件状态:在售 FET 类型:N 沟道 技术:MOSFET (Metal Oxide) 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:120A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:2.4 毫欧 @ 60A，10V 不同 Id 时的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:53nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:5200pF @ 25V FET 功能:- 功率耗散（最大值）:* 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220 标准包装:2,000 |
| STP200N4F3 | 功能描述:MOSFET N-Ch 40Volt 120Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP200N6F3 | 功能描述:MOSFET N-channel 60 V 120 A PAK TO-22 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP200NF03 | 功能描述:MOSFET N-Ch 30 Volt 120 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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