参数资料
型号: STP2003PQFP
元件分类: 参考电压二极管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低电流运算,低反向泄露,低噪声稳压二极管
文件页数: 10/20页
文件大小: 221K
代理商: STP2003PQFP
10
STP2000QFP
32-bit SBus Master I/O Controller
Master I/O
July 1997
1. This is the only violation of SBus Specification B.0. No known implementation to date provides less than 1.0 ns hold time on these
signals.
AC Characteristics: SBus Timing
Signal #
Parameter
Conditions
Min
Max
Units
1
Clock Period
40.0
60.0
ns
2
Clock High
17.0
ns
3
Clock Low
17.0
ns
4
Hold wrt CLK Rising
0.0
ns
5
Setup to CLK Rising
Hold wrt CLK Rising
[1]
15.0
ns
6
1.0
ns
7
Hold wrt CLK Rising
0.0
ns
8
CLK Rising to Output Valid
160 pF load
2.5
22.5
ns
9
CLK Rising to Output Invalid
160 pF load
2.5
20.0
ns
AC Characteristics: Parallel Port Timing
Signal #
Parameter
Conditions
Min
Max
Units
10
CLK to P_D_STRB
75 pF
35
ns
11
P_D_STRB nominal width
DSW=0,1,2,3
3
SB_CLK periods
12
P_DATA valid to P_D_STRB assert
75 pF
5
ns
13
P_DATA valid (nominal)
DSS=0, DSN=3
6
SB_CLK periods
14
P_ACK, P_BSY setup to CLK
5
ns
15
P_ACK, P_BSY input pulse width
3
SB_CLK periods
16
P_D_STRB setup to CLK
5
ns
17
P_D_STRB input pulse width
3
SB_CLK periods
18
P_DATA setup to P_D_STRB
36
ns
19
P_DATA input hold from P_D_STRB
4
SB_CLK periods
20
P_D_STRB to P_BSY valid
75 pF
2
3 + 26 ns
SB_CLK periods
21
CLK to P_ACK, P_BSY
75 pF
40
ns
22
P_ACK, P_BSY nominal pulse width
75 pF
3
SB_CLK periods
23
CLK to output
75 pF
35
ns
This Material Copyrighted by Its Respective Manufacturer
相关PDF资料
PDF描述
STP2003QFP Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
STP2011PGA50 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
STP2012PQFP Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
STP2013PGA-50 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
STP2014PQFP Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
相关代理商/技术参数
参数描述
STP2003QFP 制造商:SUN 功能描述:
STP200N3LL 功能描述:N-CHANNEL 30 V, 2 MOHM TYP., 120 制造商:stmicroelectronics 系列:- 包装:管件 零件状态:在售 FET 类型:N 沟道 技术:MOSFET (Metal Oxide) 漏源极电压(Vdss):30V 电流 - 连续漏极(Id)(25°C 时):120A(Tc) 不同?Id,Vgs 时的?Rds On(最大值):2.4 毫欧 @ 60A,10V 不同 Id 时的 Vgs(th)(最大值):2.5V @ 250μA 不同 Vgs 时的栅极电荷(Qg):53nC @ 4.5V 不同 Vds 时的输入电容(Ciss):5200pF @ 25V FET 功能:- 功率耗散(最大值):* 工作温度:-55°C ~ 175°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220 标准包装:2,000
STP200N4F3 功能描述:MOSFET N-Ch 40Volt 120Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP200N6F3 功能描述:MOSFET N-channel 60 V 120 A PAK TO-22 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP200NF03 功能描述:MOSFET N-Ch 30 Volt 120 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube