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参数资料
| 型号： | STP6NB90FP |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -频道900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件页数： | 1/9页 |
| 文件大小： | 109K |
| 代理商： | STP6NB90FP |
STP6NB90
STP6NB90FP
N - CHANNEL 900V - 1.7
- 5.8A - TO-220/TO-220FP
PowerMESH
MOSFET
s
TYPICAL RDS(on) = 1.7
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1999
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
STP6NB90
STP6NB90F P
VDS
Drain-source Voltage (VGS =0)
900
V
VDGR
Drain- gate Volt age (RGS =20 k
)
900
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC5.8
5.8(*)
A
ID
Drain Current (continuous) at Tc =100
oC3.6
3.6(*)
A
IDM (
)
Drain Current (pulsed)
23
A
Ptot
T otal Dissipation at Tc =25
oC
135
40
W
Derating Factor
0.92
0.32
W /
o C
dv/dt (1)
Peak Diode Recovery volt age slope
4.5
V/ns
VISO
I nsulat ion W ithstand Voltage (DC)
2000
V
Tstg
Storage Temperat ure
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
) Pulse width limited by safe operating area
( 1)ISD
≤ 6Α, di/dt ≤ 200 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
TYPE
VDSS
RDS(on)
ID
ST P6NB90
ST P6NB90FP
900 V
<2
<2
5.8 A
1/9
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相关代理商/技术参数 |
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