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参数资料
| 型号： | STPS10170CT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 170 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 136K |
| 代理商： | STPS10170CT |
Characteristics
STPS10170C
2/10
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.02 x IF
2
(RMS)
Table 1.
Absolute ratings (limiting values per diode, Tamb = 25° C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
170
V
IF(RMS)
RMS forward current
10
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 155° C
Per diode
5
A
Total package
10
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
PARM
Relative peak avalanche power
Tj = 25° C
tp = 1s
3100
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
175
°C
dV/dt
Critical rate of rise of reverse voltage
10 000
V/s
1.
thermal runaway condition for a diode on its own heatsink
dP
tot
dT
j
---------------
1
R
th j
a
–
()
--------------------------
<
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
4
°C/W
Total
2.4
Rth(c)
Coupling
0.7
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
10
A
Tj = 125° C
10
mA
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 5 A
0.92
V
Tj = 125° C
0.69
0.75
Tj = 25° C
IF = 10 A
1
Tj = 125° C
0.79
0.85
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 s, δ < 2 %
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