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参数资料
| 型号： | STPS10170CT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 170 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 136K |
| 代理商： | STPS10170CT |
STPS10170C
Characteristics
3/10
Figure 1.
Conduction losses versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature (
δ = 0.5, per
diode)
0
1
2
3
4
5
01
2
3
45
6
P
F(AV)(W)
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ=tp/T
tp
IF(AV)(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
25
50
75
100
125
150
175
I
F(AV)(A)
R
th(j-a)=15°C/W
T
δ=tp/T
tp
R
th(j-a)=Rth(j-c)
Tamb(°C)
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P(t )
P
(1s)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance, junction to case versus
pulse duration
0
10
20
30
40
50
60
70
80
1.E-03
1.E-02
1.E-01
1.E+00
I
M(A)
T
C=50°C
T
C=75°C
T
C=125°C
IM
t
δ =0.5
t(s)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
th(j-c)/Rth(j-c)
Single pulse
TO-220AB
DPAK
IPAK
DPAK
tp(s)
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