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参数资料
| 型号： | STPS10170CT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 170 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 136K |
| 代理商： | STPS10170CT |
Characteristics
STPS10170C
4/10
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
Figure 9.
Forward voltage drop versus
forward current (per diode)
Figure 10.
Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 m - DPAK)
Figure 11.
Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 m - D2PAK)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0
25
50
75
100
125
150
175
I
R(A)
T
j=150°C
T
j=125°C
T
j=25°C
T
j=75°C
T
j=175°C
VR(V)
10
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
FM(A)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
VFM(V)
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
R
th(
j
-a)(°C/W)
DPAK
SCU(cm)
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
R
th(j-a)(°C/W)
DPAK
SCU(cm)
R
th(j-a)(°C/W)
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