参数资料
型号: STR715FZ0T1TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 66 MHz, RISC MICROCONTROLLER, PQFP144
封装: 20 X 20 MM, MS-026-BFB, LQFP-144
文件页数: 46/78页
文件大小: 2018K
代理商: STR715FZ0T1TR
Electrical parameters
STR71xF
50/78
4.3.5
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V33 and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Notes:
1.
Data based on characterization results, not tested in production.
2.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3.
When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise
refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is
induced by VIN<VSS. Refer to Section 4.2 on page 34 for more details.
4.
Leakage could be higher than max. if negative current is injected on adjacent pins.
5.
The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding
IPU and IPD current characteristics described in Figure 18 to Figure 19).
Table 29.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage 1)
CMOS ports
0.3V33
V
VIH
Input high level voltage 1)
0.7V33
Vhys
Schmitt trigger voltage hysteresis
2)
0.8
V
VIL
Input low level voltage 1)
P0.15 WAKEUP
0.9
0.8
V
VIH
Input high level voltage 1)
21.35
Vhys
Schmitt trigger voltage hysteresis
2)
0.4
V
VIL
Input low level voltage 1)
TTL ports
0.8
V
VIH
Input high level voltage 1)
2.0
IINJ(PIN) Injected Current on any I/O pin
± 4
mA
ΣIINJ(PIN)
3)
Total injected current (sum of all
I/O and control pins)
± 25
Ilkg
Input leakage current 4)
VSSVINV33
±1
A
RPU
Weak pull-up equivalent
resistor5)
VIN=VSS
110
150
700
k
RPD
Weak pull-down equivalent
resistor5)
VIN=V33
110
150
700
k
CIO
I/O pin capacitance
5
pF
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