参数资料
型号: SUD50P10-43L-E3
厂商: Vishay Siliconix
文件页数: 1/9页
文件大小: 0K
描述: MOSFET P-CH D-S 100V TO252
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 37.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 43 毫欧 @ 9.2A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 160nC @ 10V
输入电容 (Ciss) @ Vds: 4600pF @ 50V
功率 - 最大: 136W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 标准包装
其它名称: SUD50P10-43L-E3DKR
SUD50P10-43L
Vishay Siliconix
P-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.043 at V GS = - 10 V
- 100
0.048 at V GS = - 4.5 V
I D (A) a
- 37
- 35
Q g (Typ.)
54 nC
FEATURES
? TrenchFET ? Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
TO-252
Drain Connected to Tab
G
S
G
D
S
Top View
Ordering Information : SUD50P10-43L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 100
± 20
- 37.1 a
Unit
V
Continuous Drain Current (T J = 175 °C) b
T C = 125 °C
T A = 25 °C
I D
- 31 a
- 9.2 b, c
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
T A = 125 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 7.7 b, c
- 40
- 50 a
- 6.9 b, c
- 35
61
A
mJ
T C = 25 °C
136
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
95
8.3 b, c
W
T A = 70 °C
5.8 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient a
Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
15
40
0.85
18
50
1.1
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
www.vishay.com
1
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