参数资料
型号: SUM8.2FSMS
厂商: SOLID STATE DEVICES INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED PACKAGE-2
文件页数: 1/2页
文件大小: 77K
代理商: SUM8.2FSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information
1/
SUM 8.2 F
_ _ __
L Screening2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L
Package
___ = Axial
SMS = Surface Mount Square Tab
L
Recovery Time
F = Fast Recovery
L
Voltage
8.2 = 8200 V
SUM8.2F & FSMS
0.5 AMP
8200 VOLTS
450 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Fast Recovery: 450 nsec Maximum
PIV 8200 Volts
Hermetically Sealed Axial and Surface Mount
Package
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
TX, TXV, and Space Level Screening Available
2/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
I0
IR
VF
IFSM
tRR
CJ
θJL/θJE
Units
mA
μA
Volts
Amps
nsec
pF
°C/W
Conditions
Volts
25°C
100°C
25°C
100°C
25°C
VR = 100V
fT = 1MHZ
L = 3/8”
SUM8.2F
8200
500
300
1.0
15
13
25
450
8
18
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a
suitable dielectric material.
4/ IF = IO; Max. forward voltage measured with instantaneous forward pulse of 300sec
minimum.
5/ Max. Lead/End Tab temp. for soldering is 250°C, 3/8” from case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=.25A, TA=25°C.
Axial
Surface Mount
Square Tab
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0052B
DOC
相关PDF资料
PDF描述
SUM8.2FSMSTXV 0.5 A, SILICON, SIGNAL DIODE
SUM8.2FTXV 0.5 A, SILICON, SIGNAL DIODE
SV-3SS STABISTOR DIODE
SV1040T/R13 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-277
SV1516FMRC 205 A, 1600 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
SUM85N03-06P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-06P_07 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175Celsius MOSFET
SUM85N03-06P-E3 功能描述:MOSFET 30V 85A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM85N03-07P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P-E3 功能描述:MOSFET 30V 85A 93W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube