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参数资料
| 型号： | SUV85N10-10-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 100V TO220AB |
| 标准包装： | 500 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6550pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 带卷 (TR) |
SUV85N10-10
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175 _ C MOSFET
PRODUCT SUMMARY
V (BR)DSS (V)
r DS(on) ( W )
I D (A)
FEATURES
D TrenchFET r Power MOSFET
D 175 _ C Junction Temperature
100
0.0105 @ V GS = 10 V
0.012 @ V GS = 4.5 V
TO-262
1
2 3
85 a
APPLICATIONS
D DC/DC Primary Side Switch
D
G
G
D S
S
Top View
SUV85N10-10
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T C = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
100
" 20
Unit
V
Continuous Drain Current (T J = 175 _ C)
Pulsed Drain Current
Avalanche Current
T C = 25 _ C
T C = 125 _ C
I D
I DM
I AR
85 a
60 a
240
75
A
Repetitive Avalanche
Energy b
L = 0.1 mH
E AR
280
mJ
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
T C = 25 _ C
T A = 25 _ C d
P D
T J , T stg
250 c
3.75
- 55 to 175
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount d
Symbol
Limit
40
Unit
Junction-to-Ambient
Junction-to-Case
Free Air
R thJA
R thJC
62.5
0.6
_ C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
www.vishay.com
1
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