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参数资料
| 型号： | SYS8512RKX-12 |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 MULTI DEVICE SRAM MODULE, 120 ns, PSMA36 |
| 封装： | PLASTIC, MODULE, SIP-36 |
| 文件页数： | 2/7页 |
| 文件大小： | 471K |
| 代理商： | SYS8512RKX-12 |
SYS8512RKX-70/85/10/12
ISSUE 1.0 March 1999
2
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Recommended Operating Conditions
Parameter
Symbol
min
typ
max
unit
Voltage on any pin relative to V
SS
V
T
-0.5
-
+7
V
Power Dissipation
P
T
-
1
-
W
Storage Temperature
T
STG
-55
-
+150
oC
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
(2) V
t can be -3.5V pulse of less than 20ns.
Parameter
Symbol
min
typ
max
unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.2
-
6.0
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Operating Temperature
T
A
0
-
70
oC
T
AI
-40
-
85
oC
(L)
DC Electrical Characteristics (V
CC=5V±10%)
TA 0 to 70OC
Parameter
Symbol Test Condition
min
typ(2) max Unit
I/P Leakage Current
A0~A16, OE
I
LI1
0V - V
IN - VCC
--
±8
A
Output Leakage Current
D0~D7
I
LO
CS = V
IH,VI/O = GND to VCC
--
±8
A
Operating Supply Current
I
CC
CS = V
IL ,II/O = 0mA,VIL-VIN-VCC-2.1V
-16
44 mA
Average Supply Current
TTL levels
I
CC1
Min. Cycle, CS = V
IL, VIN = VIL/VCC-2.1V
-
70
110 mA
CMOS levels
I
CC2
Min. Cycle, CS - 0.2V, V
IN = 0.2V/VCC-0.2V -24
40 mA
Standby Supply Current TTL levels
I
SB
CS = V
CC-2.1V, VIL - VIN - VCC-2.1V
-5
12 mA
CMOS levels
I
SB1
CS = V
CC-0.2V, 0.2 - VIN - VCC-0.2V
-
0.2
8
mA
-L Part
I
SB2
As above
-
10
500 A
Output Voltage
V
OL
I
OL=2.1mA
-
0.4
V
OH
I
OH = -1.0mA
2.4
-
V
Typical values are at V
CC=5.0V,TA=25
oC and specified loading.
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