参数资料
型号: SYS8512RKX-12
元件分类: SRAM
英文描述: 512K X 8 MULTI DEVICE SRAM MODULE, 120 ns, PSMA36
封装: PLASTIC, MODULE, SIP-36
文件页数: 3/7页
文件大小: 471K
代理商: SYS8512RKX-12
SYS8512RKX-70/85/10/12
ISSUE 1.0 March 1999
3
CS
OE
WE
DATA PINS
SUPPLY CURRENT
MODE
H
X
High Impedance
ISB1 , ISB2
Standby
L
H
Data Out
ICC1 , ICC2
Read
L
Data In
ICC1 , ICC2
Write
L
H
L
Data In
ICC1 , ICC2
Write
Notes : H = VIH : L =VIL : X = VIH or VIL
* Input pulse levels: 0V to 3.0V
* Input rise and fall times: 5ns
* Input and Output timing reference levels: 1.5V
* Output load: see diagram
* V
CC=5V±10%
AC Test Conditions
Output Load
-L Part
Parameter
Symbol
Test Condition
min
typ(1)
max
Unit
V
CC for Data Retention
V
DR
CS - V
CC-0.2V
2.0
-
V
Data Retention Current
V
CC = 3.0V, CS = VCC-0.2V
I
CCDR1
(2)
T
OP = 0°C to 40°C
-
9
100
A
I
CCDR2
T
OP = 0C to 70C
-
9
200
A
I
CCDR3
T
OP = TAI
-
280
A
Chip Deselect to
Data Retention Time
t
CDR
See Retention Waveform
0-
-
ns
Operation Recovery Time
t
R
See Retention Waveform
5-
-
ms
Notes (1) Typical figures are measured at 25°C.
(2) This parameter is guaranteed not tested.
Parameter
Symbol
Test Condition
max
Unit
Input Capacitance (CS, A17, A18)
C
IN1
V
IN = 0V
8
pF
I/P Capacitance (other)
C
IN2
V
IN = 0V
32
pF
I/O Capacitance
C
I/O
V
I/O = 0V
40
pF
Capacitance (V
CC=5V±10%,TA=25
oC)
Note: Capacitance calculated, not measured.
Operation Truth Table
Low V
cc Data Retention Characteristics - L Version Only
645
100pF
I/O Pin
1.76V
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