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参数资料
| 型号： | T436416A |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 4M X 16 SDRAM |
| 中文描述： | 4米× 16内存 |
| 文件页数： | 23/29页 |
| 文件大小： | 712K |
| 代理商： | T436416A |
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TE
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tm
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page
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T436416A
TM Technology Inc. reserves the right
P.23
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 10 /A P
C L = 2
C L = 3
W E
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n't care
R A a
C A a
C A b
R A a
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A b 0
Q A b 0
Q A b 1
Q A b 1
Q A b 2
Q A b 3
Q A b 2
Q A b 4
Q A b 3
Q A b 5
Q A b 4
Q A b 5
* N o te2
1
2
2
1
R o w A c tiv e
(A -B a n k )
R ead (A -
B an k )
R ead (A -
B an k )
B u rst S to p
P rech arg e
(A -B a n k )
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of ‘Full Page write burst stop cycle’.
3. Burst stop is valid at every burst length.
相关PDF资料 |
PDF描述 |
|---|---|
| T436416A-10S | 4M X 16 SDRAM |
| T436416A-10SG | Terminal Block End Barrier; For Use With:AB1 Series Terminal Blocks; Accessory Type:End Barrier; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| T436416A-6S | 4M X 16 SDRAM |
| T436416A-6SG | 4M X 16 SDRAM |
| T436416A-7.5S | 4M X 16 SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T436416A-10S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-10SG | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-6S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-6SG | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416A-7.5S | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
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